The results of systematic investigations of Si crystals having a random distribution of small (10 to 100 nm) structure inhomogeneities (microdefects) by measuring the dependence of the integral Laue reflection coefficient in the symmetrical case on the inclination angle Rh(α) by the inclination method are presented. The errors of the method of precise determination of the parameters of the defect structure are estimated. Problems of the influence of different factors associated with the nonideality of the experiment on the dependence Rh(α), the question about the optimal choice of experimental conditions, and the limits of the possibilities of determining defect structure parameters are considered.