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Articles you may be interested inSynthesis and characterization of self-catalyzed CuO nanorods on Cu ∕ TaN ∕ Si assembly using vacuum-arc Cu deposition and vapor-solid reaction Gap-filling capability and adhesion strength of the electroless-plated copper for submicron interconnect metallization J.Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization This work attempted to implant a Cu catalyst into a TaN ͑500 Å͒/FSG ͑1200 Å͒/Si assembly using a metal vapor vacuum arc ion implanter. The range of the copper dose was between 5.0ϫ10 15 and 1.0ϫ10 17 cm Ϫ2 and the accelerating voltage ranged from 30 to 50 kV. Both blanked and patterned specimens were subsequently deposited with an electroless-plated Cu film. The specimens as a whole were characterized by secondary ion mass spectrometer ͑SIMS͒, x-ray diffraction ͑XRD͒, and field emission scanning electron microscope ͑FESEM͒. The sheet resistance was measured by a four-point probe. A noticed relationship between SIMS depth profiles and the ion energy was established. The XRD spectra also showed that electroless-plated copper film possessed a strongly characteristic peak of Cu͑111͒ preferred orientation. An excellent gap filling in a 0.2-m-width ͑AR 7:1͒ trench/via was observed by FESEM. The sheet electric resistivity of the specimens was decreased to 1.93 ⍀ cm after annealing at 500°C for 1.5 h under an atmosphere of 10%H 2 -90%N 2 .