The effect of the interface between Al 2 O 3 and HfO 2 sublayers on the dielectric constant was investigated in HfO 2 /Al 2 O 3 nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700°C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 Å or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al 2 O 3 and monoclinic or tetragonal HfO 2. As the sublayer thickness was reduced to 10 Å, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface.

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