This is a repository copy of Tuning the Radiative Lifetime in InP Colloidal Quantum Dots by Controlling the Surface Stoichiometry..

With a large exciton Bohr radius and a high hole mobility in the bulk, GaSb is an important semiconductor material for technological applications. Here, we present a theoretical investigation into the evolution of some of its most fundamental characteristics at the nanoscale. GaSb emerges as a widely tunable, potentially disruptive new colloidal material with huge potential for application in a wide range of fields.

We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and surface stoichiometry motivated by the rapid development of experimental techniques to achieve high periodicity and colloidal quantum dot characteristics. The homogeneous response of colloidal quantum dot arrays to different light polarizations is also investigated. Our results shed light on the optical behaviour of these novel multi-dimensional nanomaterials and identify some of them as ideal building blocks for intermediate band solar cells.

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Two-dimensional quantum dot (QD) arrays are considered as promising candidates for a wide range of applications that heavily rely on their transport properties. Existing QD films, however, are mainly made of either toxic or heavy-metal-based materials, limiting their applications and the commercialization of devices. In this theoretical study, we provide a detailed analysis of the transport properties of “green” colloidal QD films (In-based and Ga-based), identifying possible alternatives to their currently used toxic counterparts. We show how changing the composition, stoichiometry, and the distance between the QDs in the array affects the resulting carrier mobility for different operating temperatures. We find that InAs QD films exhibit high carrier mobilities, even higher compared to previously modeled CdSe (zb) QD films. We also provide the first insights into the transport properties of properly passivated InP and GaSb QD films and envisage how realistic systems could benefit from those properties. Ideally passivated InP QD films can exhibit mobilities an order of magnitude larger compared to what is presently achievable experimentally, which show the smallest variation with (i) increasing temperature when the QDs in the array are very close and (ii) an increasing interdot distance at low operating temperatures (70 K), among the materials considered here, making InP a potentially ideal replacement for PbS. Finally, we show that by engineering the QD stoichiometry, it is possible to enhance the film’s transport properties, paving the way for the synthesis of higher performance devices.