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Nonstoichiometric hafnium oxide (HfO x ) resistive-switching memory devices with low-power operation have been demonstrated. Polycrystalline HfO x (O : Hf ¼ 1:5 : 1) films with a thickness of 20 nm are grown on a titanium nitride (TiN) bottom electrode by commercial atomic layer deposition. Platinum (Pt) as a top electrode is used in the memory device. Voltage-induced resistance switching is repeatedly observed in the Pt/HfO x /TiN/Si memory device with resistance ratio is greater than 10. During the switching cycles, the power consumptions for high-and low-resistance states are found to be 0.25 and 0.15 mW, respectively. At 85 C, the memory device shows stable resistance switching and superior data retention with resistance ratio is greater than 100. In addition, our memory device shows little area dependence of resistance-switching behavior. The anodic electrode containing noble metal Pt serves an important role in maintaining stable resistance switching. The resistance switching in the HfO x films is thought to be due to the defects that are generated by the applied bias. The nonstoichiometric HfO x films are responsible for the low SET and RESET currents during switching. Our study shows that the HfO x resistive-switching memory is a promising candidate for next-generation nonvolatile memory device applications.

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