The formation of polycrystalline Si layers on flexible plastic substrates, through plasma enhanced chemical vapor deposition and excimer laser annealing, is investigated. Combining low-temperature ͑300°C͒ annealing with laser dehydrogenation/crystallization produces good-quality polycrystalline silicon with a reduced shot density. By using optimal crystallization conditions it is possible to achieve a superlateral growth crystallization regime, with a grain size up to 1 m, and void-free material, as confirmed by the presented structural analysis. The beneficial effect of the low-temperature thermal annealing has been related to the removal of nonbound hydrogen, as supported by the elastic recoil detection analysis and IR analysis of the samples. To validate the process, we fabricated non-self-aligned polysilicon thin-film transistors ͑TFTs͒ directly on spin-coated polyimide substrates, with a maximum processing temperature of 300°C and with a relatively low shot density ͑Ͻ10 shots/point͒. The TFTs presented good electrical characteristics with an on/off ratio Ͼ10 6 , a field-effect mobility up to 65 cm 2 /V s, and a threshold voltage of 7 V. These results confirmed that the developed crystallization process is suitable to fabricate polysilicon TFTs on polymeric substrates, allowing an increased process throughput.

Photodetection in the ultraviolet (UV) region has drawn extensive attention owing to its various applications in industrial, environmental, and even biological fields. In this letter, we report on the morphological and electro-optical characteristics of continuous thin metal film Ni 2 Si/4H-SiC photodiodes properly designed for the realization of an extremely compact digital sensor suited to measure the total sun UV radiation for environmental UV light monitoring.

This work reports on the morphological and electrical properties of Nibased back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped 110 µm 4H-SiC thinned substrates after mechanical grinding. Then, to achieve Ohmic behavior, the metal films have been irradiated with an UV excimer laser with a wavelength of 310 nm, an energy density of 4.7 J/cm 2 and pulse duration of 160 ns. The morphological and structural properties of the samples were analyzed by means of different techniques. Nanoscale electrical analyses by conductive Atomic Force Microscopy (C-AFM) allowed correlating the morphology of the annealed metal films with their local electrical properties. Ohmic behavior of the contacts fabricated by laser annealing have been investigated and compared with the standard Rapid Thermal Annealing (RTA) process. Finally, it was integrated in the fabrication of 650V SiC Schottky diodes.

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Silicided Ni/Au contacts with very low contact resistance were realized on p-type [001] silicon at low temperature by ex-situ or, alternatively, by in situ annealing processes. During the ex-situ annealing, performed at 200  °C for 10 s, a uniformly thin (14 nm) Ni2Si layer was formed having an extremely flat interface with silicon thanks to the trans-rotational structure of the silicide. During the in situ annealing, promoted by a sputter etch processing (T < 300  °C), a 44 nm-thick silicide layer was formed as a mixture of trans-rotational NiSi and epitaxial NiSi2, domains. In both cases, using a low thermal budget has guaranteed a limited consumption of silicon during the reaction process and a good adhesion with the substrate avoiding gold contaminations. As a consequence of the presence of trans-rotational domains, wherein a pseudo-epitaxial relationship between the silicide and the silicon lattices is established, an ohmic behavior was observed in a wide range of substrate doping (3.5 × 1018 ÷ 3 × 1019 B/cm3) for both annealing processes (in situ and ex-situ). On the other hand, conventional TiNiAu and CrNiAu contacts showed, in the same range of B doping concentration, a rectifying behavior with systematically higher specific contact resistance values (Rc) compared to those of the Ni silicided contacts.