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A systematic approach to CMOS Low Noise Amplifier design is presented. This approach uses an input impedance matching technique based on LC Ladder filters which will provide suitable input matching in any arbitrary band (S11<-10dB), also S22 is about -10 dB in average. Using cascode structure, maximum power gain about 25 dB is achievable. Noise level is less than 3 dB over the full band of UWB. Power dissipation of this amplifier is only 8.5 mw and operates with 0.85 v supply voltage while 0.13 µm CMOS technology is used

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Abstract-This paper presents the design and nonlinear analysis of a mm-wave wideband Doherty power amplifier at 22 to 29GHz with 7GHz bandwidth, the design is done using 0.15µm GaAs PHEMT transistor to support a variety of mm-wave applications including point to point digital radio, LMDS/LMCS , ka-band satellite spacecraft and ISM applications. The wideband Doherty power amplifier provides greater than 21dBm of output power across 22-29 GHz, with a typical PAE of 35% and typical gain 15dB over the frequency range. The designed Doherty power amplifier also showed acceptable linearity when induced with two tone signal. Analysis results show that the Doherty power amplifier significantly improves both efficiency and linearity in power amplifier in comparison with the main amplifier.