In this article a new design of a current mode full-adder is proposed through the field effect transistors based on carbon nanotubes. The outperformance of the current mode full-adder constructed by CNTFET compared to that of constructed by CMOS is observable in the simulation and comparisons. This circuit operates based on triple input majority function. The simulation is run by HSPICE software according to the model proposed in Stanford University for CNTFETs at 0.65 V power supply voltage. The proposed circuit outperforms compared to the previous current mode full-adders in terms of speed, accuracy and PDP.