Bonding wires are extensively used in integrated circuit (IC) packaging and circuit design in RF applications. An approach to fast three-dimensional (3-D) modeling of the geometry for bonding wires in RF circuits and packages is demonstrated. The geometry can readily be used to extract electrical parameters such as inductance and capacitance. An equivalent circuit is presented to model the frequency response of bonding wires. To verify simulation accuracy, test structures have been made and measured. Excellent agreement between simulated and measured data is achieved for frequencies up to 10 GHz. The model is well suited for the design and analysis of circuits for cellular phone communication (i.e., order 2 GHz) and future wireless communication (i.e., order 5 GHz).
Index Terms-Geometricmodeling, IC packaging, integrated circuit modeling, RF circuit, semiconductor device bonding. Zhiping Yu (SM'85) received the B.S. degree from Tsinghua University, Beijing, China, in 1967 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 1980, and 1985, respectively. He is a Senior Research Scientist with the Department of Electrical Engineering, Stanford University, and also holds a Full Professorship at Tsinghua University, China. His research interests focus on IC process, device, and circuit simulation, and in particular, the numerical techniques and modeling of RF and heterostructure devices. He has been involved in efforts to develop a simulation package for optoelectronic devices and 3-D solid modeling for IC's. Besides the full time university research, he is a consultant to HP Computer System and Technology Lab, HP, developing advanced transport models for sub-0.25m CMOS technology, including quantum mechanical effects.Dr. Yu is an Associate Editor of the IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS.Robert W. Dutton (F'99) received the B.S., M.S., and circuit technologies-especially the use of computer-aided design (CAD) and parallel computational methods. He has published more than 200 journal articles and graduated more than four dozen doctorate students.Dr. Dutton received the 1987 IEEE J. J.