The effect of hydrogen dilution on the light degradation behavior of amorphous silicon (a-Si:H) p-i-n solar cells fabricated by mercury-sensitized photochemical vapor deposition has been systematically investigated. In the case of solar cells with no p/i buffer layer, the open-circuit voltage (Voc) of the cells with the i layer prepared by H2-diluted SiH4 was found to increase with the light-soaking time, while the Voc of the cell with i layer prepared from pure SiH4 decreased. Moreover, the single junction solar cell with the Voc of 1.001 V and fill factor of 0.72 has been achieved by optimizing H2 dilution ratio in i layer and employing the wide band gap p and buffer layer.

The state-resolved isotope effect on the cross sections of 2p atom formation via precursor doubly excited states of H 2 and D 2 is obtained at 80 eV incident electron energy and 3 • scattering angle by means of coincident electron-energy-loss spectroscopy as well as theoretical fits based on the reflection approximation and the survival probability. It turns out that the degree of the isotope effect depends strongly on the precursor doubly excited states and hence is a significant character of them. The origin of this dependence is discussed.

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Hydrogenated anorphous Elllcon nitrlde (a-SlN:II) hae been firet applled aa a lunlneecent active layer (l-layer) fn anorphous vieible-Llght Thln FiLm tlght Enltting Dlode (rrlno). The TFLED hae a etructure of glaee subetrate/IIO/p a-SlC:H/1 a-SlN:II/n a-StC:II/A1. The red color emleslon can be obeerved et room temperature from the TFLED of whlch the optical energy gap of I a-SlN:II layer le around 2.41 eV.