Atomic layer deposition (ALD) is utilized to grow high performance aluminum oxide (Al2O3) barrier films on flexible PET substrates, where the effects of precursor pulse time and deposition temperature on the film properties are also studied in this work. Significant differences are observed that the water vapor transmission rate of the PET substrate is largely improved by coating the Al2O3 barrier films. Further observations on the surface roughness, optical transmittance, adhesion, mechanical properties of the deposited films are also conducted. The results show that the Al2O3 film deposited with 10 msec precursor pulse time and 60°C deposition temperature behaves the best performance.

Atomic layer deposition (ALD) is utilized to grow high performance zinc oxide (ZnO) thin films, where the effects of ALD process temperature on the thin film properties are also studied in this work. Some major properties of the ALD ZnO films are characterized and compared with those of sputtered ZnO films. Significant differences are observed that the electrical resistances of the ALD ZnO films are largely improved, while the optical transmittances also increase. Nevertheless, the adhesion and mechanical properties of the ALD films are worse than the sputtered films because of the weak bonding in the ALD process. For various substrate temperatures, the ALD ZnO films with 200°C behave the best performance.

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