We investigate the strain-dependent electronic and magnetic properties of two-dimensional (2D) monolayer and bilayer MoS(2), as well as 1D MoS(2) nanoribbons and nanotubes using first-principles calculations. For 2D monolayer MoS(2) subjected to isotropic or uniaxial tensile strain, the direct band gap of MoS(2) changes to an indirect gap that decreases monotonically with increasing strain; while under the compressive strain, the original direct band gap is enlarged first, followed by gap reduction when the strain is beyond -2%. The effect of isotropic strain is even stronger than that of uniaxial strain. For bilayer MoS(2) subjected to isotropic tensile strain, its indirect gap reduces monotonically to zero at strain about 6%; while under the isotropic compressive strain, its indirect gap increases first and then reduces and turns into direct gap when the strain is beyond -4%. For strained 1D metallic zigzag MoS(2) nanoribbons, the net magnetic moment increases slightly with axial strain from about -5% to 5%, but drops to zero when the compressive strain is beyond -5% or increases with a power law beyond 5%. For 1D armchair MoS(2) nanotubes, tensile or compressive axial strain reduces or enlarges the band gap linearly, and the gap can be fully closed for nanotubes with relatively small diameter or under large tensile strain. For zigzag MoS(2) nanotubes, the strain effect becomes nonlinear and the tensile strain can reduce the band gap, whereas compressive strain can initially enlarge the band gap and then decrease it. The strain induced change in projected orbitals energy of Mo and the coupling between the Mo atom d orbital and the S atom p orbital are analyzed to explain the strong strain effect on the band gap and magnetic properties.

The novel electronic and magnetic properties of BeO nanoribbons (BeO NRs) as well as their stability are investigated through extensive density functional theory calculations. Different from semiconducting graphene nanoribbons and insulating BN ribbons, all zigzag edged BeO NRs are revealed to display ferromagnetic and metallic natures independent of the ribbon width and edge passivation. The polarized electron spins in H-passivated zigzag BeO NRs are from the unpaired electrons around the weakly formed Be-H bonds, while those of bare zigzag BeO NRs are due to the 2p states of edge O atoms. In sharp contrast, all armchair BeO NRs are nonmagnetic insulators regardless of the edge passivation. In particular, all bare armchair BeO NRs have a nearly constant band gap due to a peculiar edge localization effect. Interestingly, the band gaps of all armchair BeO NRs can be markedly reduced by an applied transverse electric field and even completely closed at a critical field. The critical electric field required for gap closing decreases with increasing ribbon width, thus the results have practical importance. Further stability analysis shows that bare BeO NRs are more stable than H-passivated BeO NRs of similar ribbon widths and bare armchair BeO NRs are energetically the most favorable among all the nanoribbons.

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We reveal a rich variety of electronic and magnetic properties of H-terminated BC2N nanoribbons (BC2NNRs) by using extensive first-principles calculations. Zigzag edged BC2NNRs (z-BC2NNRs) can be semiconducting or metallic depending on the alignment of edge atoms. In particular, magnetic and even half-metallic behaviors can appear in some edged z-BC2NNRs when the ribbon width is over a critical value. Armchair-edged BC2NNRs also can be semiconducting or metallic but determined by the proportion of carbon, nitrogen, and boron atoms in the ribbons. The band gaps of all semiconducting BC2NNRs can be explained by a universal mechanism that is due to the charge polarization between the opposite edges, which is impaired with increasing ribbon width.