Zn0.95Co0.05O Bulk samples were synthesized by solid state reaction method and annealed by different processes. The Zn treated samples show ferromagnetism，whereas the vacuum annealed samples do not show ferromagnetism. The XRD patterns show that there is Co impurity phase in the sample after Zn treatment at 1100℃，which is the reason of the ferromagnetism observed. At low temperature，both the positive and negative magnetoresistance （MR） effect can be observed for all the samples. We conclude that the s-d exchange_interaction_induced spin-splitting gives rise to positive MR， while the formation of bound magnetic polarons and the magnetic field suppressed spin-disorder scattering are responsible for the negative MR behavior under high field.

Zn 1−x MnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn 1−x MnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons (BMPs) play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature, paramagnetic Zn 1−x MnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.

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