Besides the conventional carbon sources, acetyl-CoA has recently been shown to be generated from acetate in various types of cancers, where it promotes lipid synthesis and tumour growth. The underlying mechanism, however, remains largely unknown. We find that acetate induces a hyperacetylated state of histone H3 in hypoxic cells. Acetate predominately activates lipogenic genes ACACA and FASN expression by increasing H3K9, H3K27 and H3K56 acetylation levels at their promoter regions, thus enhancing de novo lipid synthesis, which combines with its function as the metabolic precursor for fatty acid synthesis. Acetyl-CoA synthetases (ACSS1, ACSS2) are involved in this acetate-mediated epigenetic regulation. More importantly, human hepatocellular carcinoma with high ACSS1/2 expression exhibit increased histone H3 acetylation and FASN expression. Taken together, this study demonstrates that acetate, in addition to its ability to induce fatty acid synthesis as an immediate metabolic precursor, also functions as an epigenetic metabolite to promote cancer cell survival under hypoxic stress.
Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.
Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor-liquid-solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe 82 B 18 alloy and N 2 as reactants. Liquid Fe 82 B 18 not only supplies boron but also continuously dissociates nitrogen atoms from the N 2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.
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