No abstract

Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N 2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of −15 V applied to the metal electrode for 10 −6 s causes a flatband voltage shift of ϳ1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost.

In this work, silicon photonics structures for the optical addressing of trapped ion is developed for quantum computing applications. Grating-waveguide-grating structures of various designs are designed, and fabricated for various radius curvatures of 12, 15, 25 and 30 µm, respectively. From the optical measurements, gratings with radius of curvature of 25 and 30 µm exhibit lower power loss of 36.5 and 33.9 dB with better-focused beam profiles as compared to those with radius of curvature of 12 and 15 µm. The beam width from these gratings ranges between 17.31 to 41.54 µm, which provides the feasibility to perform optical addressing on 2 to 4 Sr + ions trapped along the ground electrode of the ion trap.

No abstract