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The performance of perovskite solar cells is greatly affected by the crystallization of the perovskite active layer. Perovskite crystal grains should neatly arrange and penetrate the entire active layer for an ideal perovskite crystallization. These kinds of crystallized perovskite films exhibit fewer defects and longer carrier lifetime, which is beneficial to enhance the performance of perovskite solar cells. Here, by testing the residual charge of perovskite solar cells with different crystallization conditions, it is demonstrated that the residual charge exists widely at the grain boundary, which is parallel to the device, and the residual charge is related to the performance of the perovskite solar cells. Single crystal grains neatly arranged and penetrate the entire active layer can generate less residual charge and improve device performance of the perovskite solar cells. The results also show that the long decay time of open-circuit voltage comes from the detrapping of trapped carriers. The residual charge testing technology provides a new idea for the investigation of carrier trap and detrap characteristics in photovoltaic devices.

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Quasi-two-dimensional (quasi-2D) perovskites with a multiple quantum well structure can enhance the exciton binding energy and controllable quantum confine effect, which are attractive materials for efficient perovskite lightemitting diodes (PeLEDs). However, the multiphase mixtures contained in these materials would cause nonradiative recombination at the perovskite film surface. Here, a facile solution surface treatment is adopted to improve the multiple quantum well structure of the quasi-2D perovskite emitting layer, which can reduce the influence of defectinduced nonradiative recombination and the electric-field-induced dissociation of excitons for the PeLEDs. The improved multiple quantum well structure is verified by UV absorption spectra and temperature-dependent photoluminescence spectra measurements. The photoluminescence quantum yield of the quasi-2D perovskite film with surface treatment has been approximately increased by 200%. Meanwhile, the electroluminescence device achieves a current efficiency of 45.9 cd/A.