Poly[(9,))] (TFB) has been widely used as a hole transport layer (HTL) material in cadmium-based quantum dot lightemitting diodes (QLEDs) because of its high hole mobility. However, as the highest occupied molecular orbital (HOMO) energy level of TFB is −5.4 eV, the hole injection from TFB to the quantum dot (QD) layer is higher than 1.5 eV. Such a high oxidation potential at the QD/HTL interface may seriously degrade the device lifetime. In addition, TFB is not resistant to most solvents, which limits its application in inkjet-printed QLED display. In this study, the blended HTL consisting of TFB and cross-linkable small molecular 4,4′-bis(3-vinyl-9H-carbazol-9-yl)-1,1′-biphenyl (CBP-V) was introduced into red QLEDs because of the deep HOMO energy level of CBP-V (−6.2 eV). Compared with the TFB-only devices, the external quantum efficiency (EQE) of devices with the blended HTL improved from 15.9 to 22.3% without the increase of turn-on voltage for spin-coating-fabricated devices. Furthermore, the blended HTL prolonged the T90 and T70 lifetime from 5.4 and 31.1 to 39.4 and 148.9 h, respectively. These enhancements in lifetime are attributed to the low hole-injection barrier at the HTL/QD interface and high thermal stability of the blended HTL after cross-linking. Moreover, the cross-linked blended HTL showed excellent solvent resistance after crosslinking, and the EQE of the inkjet-printed red QLEDs reached 16.9%.

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