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Heavily boron δ-doped polysilicon samples were prepared by horizontal low-pressure chemical vapour deposition (LPCVD) at 750 °C for 1 h and were annealed at 1200 °C for 1 h. In this way, the samples with low sheet resistance down to 8.9 Ω sq−1, were obtained. The boron concentration was determined from the room temperature sheet resistance. The resistivity was measured from room temperatures down to 2 K. A T1/2 dependence of the conductivity in an unusually wide temperature interval, even up to 80 K was observed. Above 140 K, the resistivity can be described by the T3/2 dependence. The experimental results were analysed within the theories for the disordered metals and compared with the corresponding existing resistivity data.

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