We present a SOI ring based sensor read-out system. The novelty of the architecture lies in the capability to sense the shifts of multiple peaks simultaneously with an integrated AWG spectrometer.

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Abstract:We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the Cband and O-band.

Silicon microring resonators very often exhibit resonance splitting due to backscattering. This effect is hard to model in a quantitative and predictive way. This paper presents a behavioral circuit model for ring resonators that quantitatively explains the wide variations in resonance splitting observed in experiments. The model is based on an in-depth analysis of the contributions to backscattering by both the ring waveguides and the coupling sections, and it accurately explains the origin of asymmetric resonance splitting. Backscattering transforms unidirectional ring resonators into bidirectional circuits by coupling the clockwise and counter-clockwise circulating modes.In high-Q rings this will induce visible resonance splitting, but due to the stochastic nature of backscattering this splitting is different for each resonance. Our model, based on temporal coupled mode theory, and the associated fitting method are both accurate and robust, and can also, for the first time, explain asymmetrically split resonances. The cause of asymmetric resonance splitting is identified as the backcoupling in the coupling sections. This is experimentally confirmed, and we further analyze the dependency on gap and coupling length. Moreover, the wide variations in resonance splitting of one spectrum is also analyzed and successfully explained by our circuit model that incorporates most linear parasitic effects in the ring resonator. This analysis uncovers multi-cavity interference within the ring as the source of this variation.

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.