This work provides a review of commonly used approaches for fine manipulations with nanoobjects by means of scanning probe microscopes and describes an original alternative cost-effective nanomanipulation method. High precision manipulations are important for up-to-date technologies of nanoelectronic, molecular, hybrid and nanomechanical devices and sensor systems especially for the state of the art fundamental and applied researches. A new method to form nanoassemblies by using asymmetric nanoparticles fixed on the surface with the viscoelastic linker has been proposed, theoretically substantiated and experimentally realized. An original theoretical model has been proposed to describe the ordering process of the linked nanorods by means of the multipass interaction with an atomic force microscope (AFM) tip.In addition, an adjustment of the tip-surface interaction has been proposed and implemented which is independent of the AFM. This original approach is based on additional ultrasonic excitation of the surface. This also enabled us to control the degree binding of the nanoparticles with the substrate.With these techniques we were able to form sets of chains (more than 5-μm length) consisting of nanometer-sized (10x50 nm) gold nanorods (NRs) linked to the surface of gallium arsenide by an organic linker. It has been shown that the viscoelastic binding of asymmetric nanoparticles to the surface allows us to create linear assemblies of nanoobjects in just a few passes of the AFM probe.The proposed technique significantly increases manufacturability of nanomanipulations. Direct formation of nanostructures can significantly reduce the cost of their formation in comparison with modern conventional technological approaches, which in many cases may even have some fundamental limitations (in resolution, in materials used, etc.).

In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. The charge-up of the surface is compensated by plasma gas electrons in the high frequency mode sputtering. It is shown that modes of such sputtering significantly influence on the macro-and microrelief of the crater during the process of the depth component distribution analysis. An on-off time ratio change of the voltage applied to the sample results in changing the crater shape. At the same time the increase of the sputtering frequency results in appearance of thin protrusions at the crater bottom. Improvement of the depth resolution requires optimization both on-off time ratio and frequency of voltage applied to the sample.

No abstract

No abstract

The influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.