Flash sintering occurs when an electric field is applied to a heated ceramic powder compact. At a critical combination of field and temperature, a power surge occurs (the "flash event") and sintering takes place in a few seconds. This paper investigates the possibility that this surge occurs by runaway Joule heating. The resistivity of 3YSZ was measured under the relevant conditions. To a good approximation, resistivity was found to be history-independent and to have the same temperature dependence before and after the flash event. These data were used to model the thermal and electrical response of 3YSZ to an applied electric field. All electrical characteristics of the flash event observed experimentally were predicted with a high degree of accuracy. It is concluded that the thermal and electric characteristics of flash sintering are a classical consequence of the negative temperature coefficient of resistivity leading to runaway Joule heating at constant voltage.

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopant distributions has stimulated an increasing interest in the mechanism that gives rise to so-called dopant contrast. In this paper a range of experimental results are used to demonstrate the wide applicability of the technique. These results are then incorporated into a model where, in particular, the effect of the surface barrier and the vacuum level are considered. It is found that the dominant contribution to the contrast mechanism is due to the three-dimensional variation of the vacuum level outside the semiconductor.