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The electron transport coefficients in both of pure gases and their mixtures are necessary data for expansion of the choices of proper gases in plasma processing. The electron transport coefficients, which include electron drift velocities, density-normalized longitudinal diffusion coefficients and density-normalized effective ionization coefficients in BF 3 -N 2 and TMS-N 2 mixtures, were firstly calculated and analyzed using a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results are very useful to consider for using BF 3 -N 2 and TMS-N 2 mixtures with various mixture ratios in plasma processing such as plasma etching, plasma-enhanced chemical vapor deposition and doping plasma.

Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.

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