This
work introduces oxidative molecular layer deposition (oMLD) as a chemical
route to synthesize highly conductive and conformal poly(3,4-ethylenedioxythiophene)
(PEDOT) thin films via sequential vapor exposures of molybdenum(V)
chloride (MoCl5, oxidant) and ethylene dioxythiophene (EDOT,
monomer) precursors. The growth temperature strongly affects PEDOT’s
crystalline structure and electronic conductivity. Films deposited
at ∼150 °C exhibit a highly textured crystalline structure,
with {010} planes aligned parallel with the substrate. Electrical
conductivity of these textured films is routinely above 1000 S cm–1, with the most conductive films exceeding 3000 S
cm–1. At lower temperatures (∼100 °C)
the films exhibit a random polycrystalline structure and display smaller
conductivities. Compared with typical electrochemical, solution-based,
and chemical vapor deposition techniques, oMLD PEDOT films achieve
high conductivity without the need for additives or postdeposition
treatments. Moreover, the sequential-reaction synthesis method produces
highly conformal coatings over high aspect ratio structures, making
it attractive for many device applications.
Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of AlO, TiO, ZnO, HfO, and ZrO were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of AlO or HfO provided the highest level of initial corrosion protection, but films of HfO exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO or ZrO produced with ALD for corrosion protection, and both are promising materials for corrosion protection.
Vapor-phase, metal-containing organic compounds can diffuse into polymers and modify the material composition and structure. In this work, using a sequential vapor infiltration process based on atomic layer deposition chemistry, we combine in situ Fourier transform infrared transmission and quartz crystal microbalance experiments with ab initio quantum chemical modeling analysis to evaluate and identify likely reaction mechanisms when poly(methyl methacrylate) (PMMA) thin films are exposed to trimethylaluminum (TMA) vapor. We find that TMA readily diffuses into the PMMA, where it physisorbs to ester carbonyl units (C]O) to form a metastable C]O/Al(CH 3 ) 3 adduct structure that desorbs at moderate temperatures (<100 C). The Lewis-acidic TMA withdraws charge from the C]O, shifting its stretching frequency from 1732 cm À1 in untreated PMMA to 1670 cm À1 after TMA exposure. At higher temperatures IR results show a new feature near 1568 cm À1 that is stable, even upon exposure to water vapor, indicating covalent bond formation. Based on known TMA-polymer reaction mechanisms and ab initio model results, we propose that at T > 100 C, TMA reacts with PMMA to form covalent resonant C]O/Al-O-C bonding units, and does not form -O-C-O-Al(CH 3 ) as previously hypothesized. This mechanistic insight will help elucidate other polymer/Lewis-acid vapor reactions and could enable new applications for sequential vapor infiltration processes.
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