A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuouswave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 μm and a thickness of 1 μm. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 μm, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 μW/mA, with a maximum unidirectional output power of 10 μW.

A 7.5µm-diameter InP microdisk laser, integrated on an SOI waveguide is demonstrated as all-optical flip-flop working in continuous-wave regime with an electrical power consumption of several mW, and allowing switching in 60 ps with pulses of 1.8fJ.

We report the experimental demonstration of an optically pumped silver-nanopan plasmonic laser with a subwavelength mode volume of 0.56(lambda/2n)(3). The lasing mode is clearly identified as a whispering-gallery plasmonic mode confined at the bottom of the silver nanopan from measurements of the spectrum, mode image, and polarization state, as well as agreement with numerical simulations. In addition, the significant temperature-dependent lasing threshold of the plasmonic mode contrasts and distinguishes them from optical modes. Our demonstration and understanding of these subwavelength plasmonic lasers represent a significant step toward faster, smaller coherent light sources.