The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces surrounded by step bunching. Thanks to the controlled contact formation between the tips of a multiple probe scanning tunneling microscope and these extended terraces, a low sheet resistance, albeit much higher than the electrical resistance of the underlying silver substrate, has been measured, advocating for the electrical viability of multilayer silicene

Two-dimensional networks of quantum dots connected by atomic bonds have an electronic structure that is distinct from that of arrays of quantum dots coupled by ligand molecules. We prepared atomically coherent two-dimensional percolative networks of PbSe quantum dots connected via atomic bonds. Here, we show that photoexcitation leads to generation of free charges that eventually decay via trapping. The charge mobility probed with an AC electric field increases with frequency from 150±15 cm2 V−1 s−1 at 0.2 terahertz to 260±15 cm2 V−1 s−1 at 0.6 terahertz. Gated four-probe measurements yield a DC electron mobility of 13±2 cm2 V−1 s−1. The terahertz mobilities are much higher than for arrays of quantum dots coupled via surface ligands and are similar to the highest DC mobilities reported for PbSe nanowires. The terahertz mobility increases only slightly with temperature in the range of 15–290 K. The extent of straight segments in the two-dimensional percolative networks limits the mobility, rather than charge scattering by phonons.

Quantum simulators are an essential tool for understanding complex quantum materials. Platforms based on ultracold atoms in optical lattices and photonic devices led the field so far, but electronic quantum simulators are proving to be equally relevant. Simulating topological states of matter is one of the holy grails in the field. Here, we experimentally realize a higher-order electronic topological insulator (HOTI). Specifically, we create a dimerized Kagome lattice by manipulating carbon-monoxide (CO) molecules on a Cu(111) surface using a scanning tunneling microscope (STM). We engineer alternating weak and strong bonds to show that a topological state emerges at the corner of the non-trivial configuration, while it is absent in the trivial one. Contrarily to conventional topological insulators (TIs), the topological state has two dimensions less than the bulk, denoting a HOTI. The corner mode is protected by a generalized chiral symmetry, which leads to a particular robustness against perturbations. Our