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Articles you may be interested inEffect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched ( Ba 0.65 , Sr 0.35 ) Ti O 3 thin films A barium strontium titannate ͑BST͒ thin films were etched in CF 4 /Ar using inductively coupled plasma. The high etch rate obtained at a CF 4 ͑20%͒/Ar͑80%͒ and the etch rate in pure argon was twice as high as that in pure CF 4 . This indicated that BST etching is a sputter-dominated process. It is impossible to avoid plasma-induced damage by energetic particles in the plasma and the contamination of nonvolatile etch products. The plasma damage was evaluated in terms of leakage current density, residues on the etched sample, and the change in roughness. After the BST thin films were exposed in the plasma, the leakage current density and roughness increased. In addition, there are appeared a nonvolatile etch products and the x-ray diffraction ͑XRD͒ ͑110͒ and ͑111͒ intensities are decreased and broaden. After annealing at 600°C in O 2 ambient for 10 min, the leakage current density, roughness, and nonvolatile etch products were reduced and the XRD ͑110͒ and ͑111͒ intensities increased. From these results, the attribution of the recovery of plasma induced damage by annealing process is owing to the desorption of metal fluorides at high temperature.

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In this study, the plasma etching of the TaN thin film with CH4/BCl3/Ar gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to SiO2 was studied as a function of the process parameters, including the amount of CH4. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.