Abstract:In this study, we have investigated the performance of multilayer films of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) treated with one of the perfluorinated carboxylic acids, named trifluoroacetic acid (TFA). According to the increased density of the PEDOT chain under unit area conditions, the sheet resistance (R sq ) has improved from 300 to 65 Ω/sq through additional processing of PEDOT:PSS from single layer to multilayer. After the further treatment with TFA, however, the R sq of the multilayer PEDOT:PSS was enhanced to 45 Ω/sq, leading to the decline of film thickness from 400 to 270 nm. Both conductivity and work function based on X-ray photoelectron spectroscopy results have built a breakthrough by double-processing because of the higher density of conductive PEDOT chains and the increase of 0.4 eV alternatives to typical indium tin oxide substrate, respectively. This improvement is contributed to the development of more effective transparent electrodes.
This paper demonstrates the fabrication of nanometer-scale
metal
contacts on individual graphene nanoribbons (GNRs) and the use of
these contacts to control the electronic character of the GNRs. We
demonstrate the use of a low-voltage direct-write STM-based process
to pattern sub-5 nm metallic hafnium diboride (HfB2) contacts
directly on top of single GNRs in an ultrahigh-vacuum scanning tunneling
microscope (UHV-STM), with all the fabrication performed on a technologically
relevant semiconductor silicon substrate. Scanning tunneling spectroscopy
(STS) data not only verify the expected metallic and semiconducting
character of the contacts and GNR, respectively, but also show induced
band bending and p–n junction formation in the GNR due to the
metal–GNR work function difference. Contact engineering with
different work function metals obviates the need to create GNRs with
different characteristics by complex chemical doping. This is a demonstration
of the successful fabrication of precise metal contacts and local
p–n junction formation on single GNRs.
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