This study focuses on the characteristics of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with n-type line-array doping channels manufactured by nanoimprint lithography. Array doping patterns with a line width/space of approximately ∼400-800 nm were fabricated by ion implantation through a poly(methyl methacrylate) mask patterned with the nanoimprint technology. The proposed TFTs show a lower threshold voltage, higher ON/OFF ratio, better subthreshold swing, higher field-effect mobility, lower gate-induced drain leakage, and reduced kink-effect compared with the conventional single-channel ones. The high implantation dosage effects of line-array doping were also investigated. This method can be applied to fabricate high-performance poly-Si TFTs in the future.