The effect of low energy irradiation, where the sputtering is imperceptible, has not been deeply studied in the pattern formation. In this work, we want to address this question by analyzing the nanoscale topography formation on Si surface, which is irradiated at room temperature by Ar + ions near the displacement threshold energy, for incidence angles ranging from 0 to 85 •. The transition from smooth to ripple patterned surface, i.e. the stability/instability bifurcation angle is observed at 55 • , whereas the ripples with their wave-vector is parallel to the ion beam projection in the angular window of 60-70 • , and with 90 • rotation with respect to the ion beam projection at the grazing angles of incidence. A similar irradiation setup has been simulated by means of molecular dynamics, which made it possible, firstly, to quantify the effect of the irradiation in terms of erosion and redistribution using sequential irradiation and, secondly, to evaluate the ripple wavelength using the crater function formalism. The ripple formation results can be solely attributed to the mass redistribution based mechanism, as erosion due to ion sputtering near or above the threshold energy is practically negligible.

Background: The ultimate phenome of any organism is modulated by regulated transcription of many genes. Characterization of genetic makeup is thus crucial for understanding the molecular basis of phenotypic diversity, evolution and response to intra-and extra-cellular stimuli. Chickpea is the world's third most important food legume grown in over 40 countries representing all the continents. Despite its importance in plant evolution, role in human nutrition and stress adaptation, very little ESTs and differential transcriptome data is available, let alone genotype-specific gene signatures. Present study focuses on Fusarium wilt responsive gene expression in chickpea.

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