In the present paper, V2O5-TeO2 glass was prepared by the melt-quenching technique. Crystallization of glass with a vanadium content higher than 35%mol results in an increase in electrical conductivity by a few orders of magnitude and a decrease in activation energy from ~0.40 to ~0.12 eV. In this work, a critical review of existing charge transfer models was presented on the example of V2O5-TeO2 glass and glass–ceramics. Schnakenberg’s and Friedman-Triberis’ charge transfer models were found to be applicable to both glass and glass–ceramics. Optical phonon frequencies obtained from Schnakenberg’s model are in agreement with FTIR studies. Values of activation energies obtained from the Schnakenberg model decrease after crystallization. Friedman-Triberis’ model shows an increase in the density of states near the Fermi level from 1019 eV−1 cm−3 in glass, to 1021 eV−1 cm−3 in glass ceramics. Structural studies show that the main crystallizing phase is Te2V2O9 which occurs with the V2O5 shell in glasses with compositions 50–50%mol and 45–55%mol. It is concluded that crystallization results in the reduction of vanadium ions in the remaining glass matrix which leads to an increase in the V4+/V5+ ratio and therefore, an increase in electrical conductivity.

Sol–gel layers have been the subject of many studies in recent decades. However, very little information exists about layers in which carbon structures are developed in situ. Using the spin-coating method, we obtained thin iron-doped SiO2/C composite films. The results of Raman spectroscopy showed that our samples consisted of graphitic forms and polymers. The latter’s contribution decreases with rising temperature. FTIR and EDS studies show changes in carbon distribution on top of the layer, depending on the sintering temperature. The samples sintered at 800 °C showed a significant increase in the contribution of carbon forms to the layer’s surface. Therefore, high conductivity can be observed in this sample. The results of XPS spectroscopy showed that the contribution of sp3 hybridized carbon increases after etching. The total electrical conductivity, studied by a DC four-wire technique, increased with the temperature and showed almost linear characteristics with significant changes below 150 K. The reduced activation energy plot has a positive temperature coefficient, which is a characteristic property of the conductive polymers in a metallic regime of conductivity.

The disintegration of a continuous metallic thin film leads to the formation of isolated islands, which can be used for the preparation of plasmonic structures. The transformation mechanism is driven by a thermally accelerated diffusion that leads to the minimalization of surface free energy in the system. In this paper, we report the results of our study on the disintegration of gold thin film and the formation of nanoislands on silicon substrates, both pure and with native silicon dioxide film. To study the processes leading to the formation of gold nanostructures and to investigate the effect of the oxide layer on silicon diffusion, metallic film with a thickness of 3 nm was deposited by molecular beam epitaxy (MBE) technique on both pure and oxidized silicon substrates. Transformation of the thin film was observed by low-energy electron microscopy (LEEM) and a scanning electron microscope (SEM), while the nanostructures formed were observed by atomic force microscope (AFM) method. Structural investigations were performed by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) methods. Our experiments confirmed a strong correlation between the formation of nanoislands and the presence of native oxide on silicon substrates.