Perovskite solar cells (PSCs) are an innovative technology with great potential to offer cost-effective and high-performance devices for converting light into electricity that can be used for both outdoor and indoor applications. In this study, a novel hole-transporting layer (HTL) was created by mixing copper phthalocyanine (CuPc) molecules into a copper­(I) thiocyanate (CuSCN) film and was applied to carbon-based PSCs with cesium/formamidinium (Cs0.17FA0.83Pb­(I0.83Br0.17)3) as a photoabsorber. At the optimum concentration, a high power conversion efficiency (PCE) of 15.01% was achieved under AM1.5G test conditions, and 32.1% PCE was acquired under low-light 1000 lux conditions. It was discovered that the mixed CuPc:CuSCN HTL helps reduce trap density and improve the perovskite/HTL interface as well as the HTL/carbon interface. Moreover, the PSCs based on the mixed CuPc:CuSCN HTL provided better stability over 1 year due to the hydrophobicity of CuPc material. In addition, thermal stability was tested at 85 °C and the devices achieved an average efficiency drop of approximately 50% of the initial PCE value after 1000 h. UV light stability was also examined, and the results revealed that the average efficiency drop of 40% of the initial value for 70 min of exposure was observed. The work presented here represents an important step toward the practical implementation of the PSC as it paves the way for the development of cost-effective, stable, yet high-performance PSCs for both outdoor and indoor applications.

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Currently, several techniques have been employed in order to obtain a better quality of perovskite solar cells (PSCs). In this research, we focus on the development of the hole transporting material (HTM) for the efficiency as well as the stability enhancement of the PSCs. Here, a hole transporting layer (HTL) was fabricated using zincdoped nickel oxide (Zn-doped NiOx) nanoparticles and the HTL was incorporated into the cesium-formamidinium (CsFA) based PSCs to improve the electrical properties. As a result, PSCs with 1% Zn-doped NiOx demonstrated the highest power conversion efficiency (PCE) up to 14.72% with an open-circuit voltage (VOC), a short-circuit current density (JSC) and a fill factor of 1.02 V, 19.59 mA/cm2 and 0.734, respectively. Moreover, the PSCs with Zn-doped NiOx showed an enhancement in shelf-stability under aging conditions. The physical properties of the Zn-doped NiOx were analyzed using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The morphological characteristics of the HTL surface were examined by scanning electron microscopy (SEM) and the photovoltaic properties were analyzed in more detail.