We investigated the effects of the annealing temperature on the optoelectronic properties of Zr-doped ZnO (ZZO) thin films deposited on glass substrates by radio frequency sputtering and annealed at 200, 300, and 400 °C. It was found by X-ray diffraction analysis that all the deposited thin films had a hexagonal crystal structure with polycrystalline grains oriented along the (0 0 2) direction. Furthermore, the film annealed at 400 ℃ had the lowest resistivity among the films due to the growth of grains, as well as the lowest resistivity of 1.5 × 10 −2 Ω•cm, a mobility of 35 cm 2 V −1 s −1 , and a carrier concentration of 4.2 × 10 19 cm −3 . It also had a maximum transmittance of 95% and an energy gap of 3.2 eV. These results show that ZZO thin films subjected to annealing at 400 ℃ are promising for use as stable photosensors.

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Mn-doped and Mn-Al co-doped zinc oxide (ZnO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature. The X-ray diffraction results revealed that both films consisted of a single phase and had a wurtzite structure with a c-axis orientation. The electrical properties, transmittance characteristics, surface properties, and crystal structures of the films were investigated following annealing at temperatures ranging from 200 to 500 °C. The results showed that the as-deposited Mn:ZnO thin film had an average transmittance of 83%. The transmittance increased to 85% following annealing at 500 °C. The as-deposited Mn-Al co-doped ZnO thin film had a low transmittance of only 40%. However, after annealing at 500 °C, the transmittance increased to 83%. The annealed Mn-Al:ZnO thin film also showed a low electrical resistivity of 1.75 × 10 −3 Ω•cm, an electron mobility of 20.8 cm 2 V −1 s −1 , and a carrier concentration of 5.3 × 10 20 cm −3 . Scanning electron microscopy (SEM) results showed that the crystal size of both thin films increased following annealing. Owing to their good optical and electrical properties, the annealed Mn-Al:ZnO thin films can be used as photosensor materials.

Mn-doped and Mn-Al co-doped zinc oxide (ZnO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature. The X-ray diffraction results revealed that both films consisted of a single phase and had a wurtzite structure with a c-axis orientation. The electrical properties, transmittance characteristics, surface properties, and crystal structures of the films were investigated following annealing at temperatures ranging from 200 to 500 °C. The results showed that the as-deposited Mn:ZnO thin film had an average transmittance of 83%. The transmittance increased to 85% following annealing at 500 °C. The as-deposited Mn-Al co-doped ZnO thin film had a low transmittance of only 40%. However, after annealing at 500 °C, the transmittance increased to 83%. The annealed Mn-Al:ZnO thin film also showed a low electrical resistivity of 1.75 × 10 −3 Ω•cm, an electron mobility of 20.8 cm 2 V −1 s −1 , and a carrier concentration of 5.3 × 10 20 cm −3 . Scanning electron microscopy (SEM) results showed that the crystal size of both thin films increased following annealing. Owing to their good optical and electrical properties, the annealed Mn-Al:ZnO thin films can be used as photosensor materials.