Deposition, annealing, and integration of ferroelectric HfxZr1−xO2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μC/cm2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance–voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.