The wettability of the metal/SiC system is not always excellent, resulting in the limitation of the widespread use of SiC ceramic. In this paper, three implantation doses of Si ions (5 × 1015, 1 × 1016, 5 × 1016 ions/cm2) were implanted into the 6H-SiC substrate. The wetting of Cu-(2.5, 5, 7.5, 10) Sn alloys on the pristine and Si-SiC were studied by the sessile drop technique, and the interfacial chemical reaction of Cu-Sn/SiC wetting couples was investigated and discussed. The Si ion can markedly enhance the wetting of Cu-Sn on 6H-SiC substrate, and those of the corresponding contact angles (θ) are raised partly, with the Si ion dose increasing due to the weakening interfacial chemical reactions among four Cu-Sn alloys and 6H-SiC ceramics. Moreover, the θ of Cu-Sn on (Si-)SiC substrate is first decreased and then increased from ~62° to ~39°, and ~70° and ~140°, with the Sn concentration increasing from 2.5%, 5% and 7.5% to 10%, which is linked to the reactivity of Cu-Sn alloys and SiC ceramic and the variation of liquid-vapor surface energy. Particularly, only a continuous graphite layer is formed at the interface of the Cu-10Sn/Si-SiC system, resulting in a higher contact angle (>40°).