Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga 3 þ ,Mn 2 þ ) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba 1 À x K x )(Zn 1 À y Mn y ) 2 As 2 , which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr 2 Si 2 (122) structure. Holes are doped via (Ba 2 þ , K 1 þ ) replacements, while spins via isovalent (Zn 2 þ ,Mn 2 þ ) substitutions. Bulk samples with x ¼ 0.1 À 0.3 and y ¼ 0.05 À 0.15 exhibit ferromagnetic order with T C up to 180 K, which is comparable to the highest T C for (Ga,Mn)As and significantly enhanced from T C up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn) 2 As 2 shares the same 122 crystal structure with semiconducting BaZn 2 As 2 , antiferromagnetic BaMn 2 As 2 and superconducting (Ba,K)Fe 2 As 2 , which makes them promising for the development of multilayer functional devices.

We report a successful observation of pressure-induced superconductivity in a topological compound Bi 2 Te 3 with T c of ∼3 K between 3 to 6 GPa. The combined high-pressure structure investigations with synchrotron radiation indicated that the superconductivity occurred at the ambient phase without crystal structure phase transition. The Hall effects measurements indicated the holetype carrier in the pressure-induced superconducting Bi 2 Te 3 single crystal. Consequently, the first-principles calculations based on the structural data obtained by the Rietveld refinement of X-ray diffraction patterns at high pressure showed that the electronic structure under pressure remained topologically nontrivial. The results suggested that topological superconductivity can be realized in Bi 2 Te 3 due to the proximity effect between superconducting bulk states and Dirac-type surface states. We also discuss the possibility that the bulk state could be a topological superconductor.high-pressure effects | pressure-tuned conductivity | topological superconductors U tilizing high pressure can be a very powerful method to generate new materials states, as demonstrated by either highpressure synthesis of new compounds, or pressure-tuned unique electronic states, such as insulator metal transitions. High pressure is particularly effective in tuning superconductivity as it is well documented that the record high superconducting transition temperature T c for either elements (1) or compounds (2) is created with the application of pressure. Recently, topological insulators (TIs) have generated great interest in the area of condensed matter physics (3-8). These materials have an insulating gap in the bulk, while also possessing conducting gapless edges or surface states in the boundaries that are protected by the timereversal symmetry (8, 9). Similar to TIs, topological superconductors have a full pairing gap in the bulk and gapless Majorana states on the edge or surface (10-13, 18). Majorana Fermions (14), half of ordinary Dirac fermions, could be very useful in topological quantum computing (15-17), which is proscriptive for new concept information technology.