Laser doping is a promising way of selective emitter formation for silicon solar cells. To quantitatively study the influence of laser parameters on the doping effect, it is necessary to develop a numerical model. This work made some improvements on an experimentally verified numerical model. The most important improvement is that the flow field and the dopant concentration profile are only computed in a subdomain instead of the whole domain. The influence of the laser power and the scanning speed on the temperature and flow field in the melt pool, the selective emitter geometry and the dopant concentration profile are investigated. Then, to accurately study how the dopant concentration profile affects the performance of the selective emitter, a semiconductor device simulation was furthermore performed based on the computed dopant concentration profiles.