The determination of fundamental optical parameters is essential for the development of new optical elements such as mirrors, gratings, or photomasks. Especially in the extreme ultraviolet (EUV) and soft x-ray spectral range, the existing databases for the refractive indices of many materials and compositions are insufficient or are a mixture of experimentally measured and calculated values from atomic scattering factors. Since the physical properties of bulk materials and thin films with thicknesses in the nanometer range are not identical, measurements need to be performed on thin layers. In this study we demonstrate how optical constants of various thin film samples on a bulk substrate can be determined from reflection measurements in the EUV photon energy range from 62 eV to 124 eV. Thin films with thickness of 20 nm to 50 nm of pure Mo, Ni, Pt, Ru, Ta, and Te and different compositions of N i x A l x , PtTe, P t x M o , R u x T a x , R u 3 R e , R u 2 W , and TaTeN were prepared by DC magnetron sputtering and measured using EUV reflectometry. The determination optical constants of the different materials are discussed and compared to existing tabulated values.

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The refractive index of a y-cut SiO2 crystal surface is reconstructed from orientation-dependent soft X-ray reflectometry measurements in the energy range from 45 to 620 eV. Owing to the anisotropy of the crystal structure in the (100) and (001) directions, a significant deviation of the measured reflectance at the Si L 2,3 and O K absorption edges is observed. The anisotropy in the optical constants reconstructed from these data is also confirmed by ab initio Bethe–Salpeter equation calculations for the O K edge. This new experimental data set expands the existing literature data for quartz crystal optical constants significantly, particularly in the near-edge regions.

Background: A plausible approach for mitigating the mask 3-D (M3D) effects observed in extreme ultraviolet (EUV) lithography is to replace the existing mask absorber with alternative materials. Absorbers with a high EUV extinction coefficient k allow for lower best focus variation (BFV) through pitch and reduced telecentricity errors (TCEs).Aim: We aim to evaluate Ta-Co alloys as potential high-k mask absorbers from material suitability and imaging standpoints.Approach: We study the film morphology, surface composition, and stability of Ta-Co alloys in mask cleaning solutions and a hydrogen environment as present in the EUV scanner to assess the material suitability from an experimental aspect. Optical constants for three selected compositions, viz., TaCo, Ta 2 Co, and TaCo 3 , were determined from EUV angle-dependent reflectivity measurements. Next, utilizing rigorous simulation software, the imaging performance of Ta-Co alloys is evaluated and compared with the reference absorber. The recommended absorber thickness for Ta-Co alloy absorbers is based upon normalized image log slope (NILS) enhancement, threshold to size, and balancing of diffraction order amplitudes. A 10 nm line and space pattern with a pitch of 20 nm and 14 nm square contact holes with a pitch of 28 nm are used for the simulation study using high numerical aperture 0.55 EUV lithography process settings. The primary imaging metrics for through pitch evaluation include NILS, TCE, and BFV. Results:The Ta-Co alloys exhibit a higher EUV extinction coefficient k compared with the currently used Ta-based absorber. TaCo and Ta 2 Co demonstrate smooth surfaces and are stable in a hydrogen environment and in mask-cleaning solutions. Conclusion:Ta-Co alloys allow for a reduction in M3D effects at a lower absorber thickness compared with a 60 nm Ta-based reference absorber.