Gold nanoparticle formation in diamond-like carbon using two different methods: Gold ion implantation and codeposition of gold and carbon J. Appl. Phys. 112, 074312 (2012) We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamondlike carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp 3 fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp 2 clustering rather than hydrogen diffusion in the film. V C 2014 AIP Publishing LLC. [http://dx

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The effect of N content on the structure and properties of rf reactively sputtered a-SiN, has been studied by Rutherford backscattering spectrometry (RBS), x-ray reflectivity (XRR), ellipsometry, and nano-indentation. The N content in the film increased with the NZ concentration in the sputtering gas until the SisN4 stoichiometry was reached. The hardness of a-SiN, increased with density, which in turn increased with the N content. The maximum hardness of 25 GPa and density of 3.2 g/cm3 were attained at the stoichiometric SisN4 composition. With the application of protective overcoat for magnetic disks in mind, thin a-SiN, films were deposited on CoPtCr media to examine their coverage, pinhole density, and wear resistance. According to x-ray photoelectron spectroscopy (XPS), the minimum thickness of a-SiN, required to protect the CoPtCr alloy from oxidation was 10 A, which was 10 A thinner than that of the reference a-CN,. A statistic model showed the lower coverage limit of a-SiN, can be attributed to its high density, which corresponds to 93% bulk density of SisN4. Compared with 45 8, a-CN, coated disks, 15 A a-SiN, coated disks had lower pinhole defect density and superior wear resistance.

A monolithic polycapillary focusing optic was tested in the microbeam x-ray fluorescence system at the Oak Ridge Center for Manufacturing Technology. The optic was designed to cover a wide energy range from 4 keV to 20 keV. The focal spot size of the output beam at 17.4 keV (Mo Kα) was measured to be 21 μm full width of half maximum. An average beam intensity of 1.5×105 photon/s/μm2 was obtained at the focus for Mo Kα line using a 12 W microfocus x-ray source. This intensity is about 2400 times over that of a direct beam at 100 mm away from the x-ray source. The small, intense x-ray beam obtained was used to analyze and map the compositions of different elements in industrial samples.