We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

Co/Fe Prussian Blue analogues are known to display both thermally and light induced electron transfer attributed to the switching between diamagnetic {Fe(II)LS(μ-CN)Co(III)LS} and paramagnetic {Fe(III)LS(μ-CN)Co(II)HS} pairs (LS = low spin; HS = high spin). In this work, a dinuclear cyanido-bridged Co/Fe complex, the smallest {Fe(μ-CN)Co} moiety at the origin of the remarkable physical properties of these systems, has been designed by a rational building-block approach. Combined structural, spectroscopic, magnetic and photomagnetic studies reveal that a metal-to-metal electron transfer that can be triggered in solid state by light, temperature and solvent contents, is observed for the first time in a dinuclear complex.

To design an efficient interference management and multiple access scheme for visible light communication (VLC) network, this letter leverages the non-orthogonal multiple access (NOMA), which has received significant attention in the 5 th generation wireless communication. With the residual interference from the successive interference cancellation in NOMA taken into account, we optimize the power allocation for NOMA VLC network to improve the achievable user rate under user quality of service (QoS) constraint. The performance of the proposed approaches is evaluated by the numerical results.Index Terms-visible light communication (VLC), nonorthogonal multiple access (NOMA), interference management.

Charge recombination in disordered neat polymer films under imbalanced excitation conditions studied using the recombination time of flight technique J. Appl. Phys. 111, 104510 (2012) Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics J. Appl. Phys. 111, 104509 (2012) Ultrafast carrier response of Br+-irradiated In0.53Ga0.47As excited at telecommunication wavelengths J. Appl. Phys. 111, 093721 (2012) Electron traps in amorphous In-Ga-Zn-O thin films studied by isothermal capacitance transient spectroscopy