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In this paper, an infrared annealing method was proposed for solution-processed indium gallium zinc oxide films. The optimized IGZO thin-film transistors (TFTs) exhibited a field-effect mobility of 2.04 cm 2 (Vs) -1 , on-off current ratio of 1.52 × 10 6 and subthreshold swing of 0.84 V/dec. Spectroscopic analysis confirmed that the infrared irradiation could enhance the removal of organic species and dehydroxylation. The results suggest that infrared annealing method is a potential process for low-temperature preparation of solution-processed oxide semiconductor layers and dielectric layers, and can be applied to the fabrication of TFT devices.

Copper nitride film prepared by plasma‐immersion ion implantation (PIII) is demonstrated to exhibit reversible resistance variance character. By forming a gradually distributed nitrogen concentration in the Cu‐nitride film, the nitride‐based memory devices show bipolar nature with a low operation voltage, forming‐free characteristics and a distinguishable resistance ratio. The bipolar switching behavior is attributed to the formation and rupture of conductive filaments within a cycle, which is confirmed by spreading‐resistance images of a conducting atomic force microscope. Based on X‐ray photoelectron spectroscopy (XPS) analysis, semiconducting Cu3N phase and metallic Cu4N phase coexist in the copper nitride film and local conducting filaments might be formed by interconnection of the metallic phases by migration of Cu+ ions under a bias voltage.