Highly oriented <111> and <110> b-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH 3 ) 3 -Si(CH 3 ) 3 ) as a precursor. The effects of laser power (P L ), total pressure (P tot ), and deposition temperature (T dep ) on the orientation, microstructure, and deposition rate (R dep ) were investigated. The orientation of the b-SiC films changed from <111> to random to <110> with increasing P L and P tot . The <111>-, randomly, and <110>-oriented b-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the <111>-and <110>-oriented films, and aligned parallel to the (111) plane in the <111>-oriented film, whereas they were perpendicular to the (110) plane in the <110>-oriented film. The highest R dep of the <111>-oriented b-SiC film was 200 lm/h at P tot = 200 Pa and T dep = 1420 K, whereas that of the <110>-oriented film was 3600 lm/h at P tot = 600 Pa and T dep = 1605 K.

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Two kinds of <111>-oriented b-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size () as a function of the distance from substrate (h) follows power laws of / h 0.62 and / h 0.71 , respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike b-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented b-SiC.G. Brennecka-contributing editor Manuscript No. 34552.

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