In this paper, we propose a thermal-electric coupling model based on the dynamic conductivity model, which considering the charge-trapping process. The charge accumulation characteristic under different current-carrying capacities was also investigated. The saturation time of average charge density and the average temperature in the space are approximate, which could be concluded that the charge accumulation is accompanied by the establishment of a temperature field. When the current-carrying capacity reaches 3000 A, the maximum surface electric field of the basin insulator will continue to rise 14.2% compared with 1500 A. The charge migration and accumulation near the enclosure results in a greatly distorted electric field near the triple junction of the ground enclosure. This paper could offer theoretical insights from a dielectric charge transport theory and perspective to be helpful for the design of spacer in HVDC-GIL.

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