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Two-dimensional boron materials have recently attracted extensive theoretical interest because of their exceptional structural complexity and remarkable physical and chemical properties. However, such 2D boron monolayers have still not been synthesized. In this report, the synthesis of atomically thin 2D γ-boron films on copper foils is achieved by chemical vapor deposition using a mixture of pure boron and boron oxide powders as the boron source and hydrogen gas as the carrier gas. Strikingly, the optical band gap of the boron film was measured to be around 2.25 eV, which is close to the value (2.07 eV) determined by first-principles calculations, suggesting that the γ-B28 monolayer is a fascinating direct band gap semiconductor. Furthermore, a strong photoluminescence emission band was observed at approximately 626 nm, which is again due to the direct band gap. This study could pave the way for applications of two-dimensional boron materials in electronic and photonic devices.

Tw o-dimensional boron materials have recently attracted extensive theoretical interest because of their exceptional structural complexity and remarkable physical and chemical properties.H owever,s uch 2D boron monolayers have still not been synthesized. In this report, the synthesis of atomically thin 2D g-boron films on copper foils is achieved by chemical vapor deposition using amixture of pure boron and boron oxide powders as the boron source and hydrogen gas as the carrier gas.S trikingly,t he optical band gap of the boron film was measured to be around 2.25 eV,w hich is close to the value (2.07 eV) determined by first-principles calculations, suggesting that the g-B 28 monolayer is afascinating direct band gap semiconductor.Furthermore,astrong photoluminescence emission band was observed at approximately 626 nm, which is again due to the direct band gap.This study could pave the way for applications of two-dimensional boron materials in electronic and photonic devices.Two-dimensional (2D) materials are attractive components of atomic-layer field-effect transistors (FETs), sensors,a nd photovoltaic and photoelectric devices. [1][2][3][4][5] Although graphene has been shown to be au seful material for highperformance electronics owing to its very high carrier mobility,i ts uffers from the lack of as ignificant band gap, which limits its application in digital electronics. [3][4][5] Hence, three-atom-thick 2D semiconducting transition-metal dichalcogenides (TMDs;e .g., MoS 2 ,W S 2 ,M oSe 2 ,W Se 2 )a nd oneatom-thick non-metal/metal layers with ah oneycomb structure (e.g., silicene,g ermanene,p hosphorene,a rsenene,a ntimonene,a nd stannene) have attracted wide interest. [3][4][5][6][7]

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FGF-10 can prevent or reduce lung specific inflammation due to traumatic or infectious lung injury. However, the exact mechanisms are poorly characterized. Additionally, the effect of FGF-10 on lung-resident mesenchymal stem cells (LR-MSCs) has not been studied. To better characterize the effect of FGF-10 on LR-MSCs, FGF-10 was intratracheally delivered into the lungs of rats. Three days after instillation, bronchoalveolar lavage was performed and plastic-adherent cells were cultured, characterized and then delivered therapeutically to rats after LPS intratracheal instillation. Immunophenotyping analysis of FGF-10 mobilized and cultured cells revealed expression of the MSC markers CD29, CD73, CD90, and CD105, and the absence of the hematopoietic lineage markers CD34 and CD45. Multipotency of these cells was demonstrated by their capacity to differentiate into osteocytes, adipocytes, and chondrocytes. Delivery of LR-MSCs into the lungs after LPS injury reduced the inflammatory response as evidenced by decreased wet-to-dry ratio, reduced neutrophil and leukocyte recruitment and decreased inflammatory cytokines compared to control rats. Lastly, direct delivery of FGF-10 in the lungs of rats led to an increase of LR-MSCs in the treated lungs, suggesting that the protective effect of FGF-10 might be mediated, in part, by the mobilization of LR-MSCs in lungs.