For dielectric inhomogeneous objects, the perceived reflections are the linear combinations of diffuse and specular reflection components. Specular reflection plays an important role in the fields of image analysis, pattern recognition, and scene synthesis. Several methods for the separation of the diffuse and the specular reflection components have been presented based on image segmentation or local interaction of neighboring pixels. We propose a simple and effective method for specularity removal in a single image on the level of each individual pixel. The chromaticity of diffuse reflection is approximately estimated by employing the concept of modified specular-free image, and the specular component is adjusted according to the criterion of smooth color transition along the boundary of diffuse and specular regions. Experimental results indicate that the proposed method is promising when compared with other state-of-the-art techniques, in both separation accuracy and running speed.

The complex dielectric functions of Si-nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix synthesized by SiOx/SiO2 superlattice approach is obtained by spectroscopic ellipsometry. The Maxwell–Garnett effective medium approximation and the Lorentz oscillator model are employed in the spectra fitting. The dependence of the dielectric functions on the nc-Si size is observed. A significant suppression in amplitude of the dielectric functions with respect to bulk crystalline silicon, and a large influence of the nc-Si size on the E1 and E2 critical points are observed and discussed.

A new method for measuring the dielectric functions change with the thickness of nanometal thin films was proposed. To confirm the accuracy and reliability of the method, a nano-thin wedge-shaped gold (Au) film with continuously varied thicknesses was designed and prepared on K9 glass by direct-current-sputtering (DC-sputtering). The thicknesses and the dielectric functions in the wavelength range of 300-1100 nm of the nano-thin Au films were obtained by fitting the ellipsometric parameters with the Drude and critical points model. Results show that while the real part of the dielectric function (ϵ₁) changes marginally with increasing film thickness, the imaginary part (ϵ₂) decreases drastically with the film thickness, approaching a stable value when the film thickness increases up to about 42 nm. This method is particularly useful in the study of thickness-dependent optical properties of nano-thin film.

A series of SiO2 films with thickness range 1–600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO2 films thicker than 60 nm are close to those of bulk SiO2. For the thin films deposited at the rate of ∼1.0 nm s−1, the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s−1, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.