Crossbar arrays are the most promising application of a resistive random access memory (RRAM) device for achieving high density memory. However, cross-talk interference in the crossbar array limits the increase in the integration density. In this paper, the combination of two anti-parallel connected diodes and a bipolar RRAM cell is proposed to suppress the sneak current in a crossbar array with anti-parallel connected diodes as the selector for the bipolar RRAM. By using the anti-parallel connected diodes as a selector, the sneak current can be effectively suppressed and the high density crossbar array of more than 1 Mb can be realized as estimated by the 1/2V read voltage scheme. These results indicate that anti-parallel connected diodes can be used as a bipolar selector and have great potential for high density bipolar RRAM crossbar array applications.

The feasibility of Schottky diode as selector has been investigated for possible application in bipolar-type resistive random access memory (RRAM) devices. In order to evaluate the feasibility of Schottky diode as selector for bipolar-type RRAM applications, a full device simulation has been performed utilizing a Schottky diode + bipolar-type RRAM structure (1SD-1R). On the other hand, we confirmed its successful operation under experimental results with Ni/TiOx/W Schottky diode + Pt/HfO2/Cu bipolar-type RRAM structure. Furthermore, by applying a lower Set voltage in the 1SD-1R structure device, the Reset current and Reset voltage are found to decrease due to the reduced compliance current. Such dependence provides the possibility of lower power consumption in the 1SD-1R structure device.

Aluminum nitride (AlN) memristive devices have attracted a great deal of attention because of their compatibility with the CMOS fabrication technology, and more likely to be extended to power electronic devices. However, the conductive mechanism and the variability of resistance switching (RS) parameters are major issues for commercial applications. In this paper, we have obtained electrical characteristics of the Al/AlN/Pt memristors under the current compliance limits of 1 𝜇𝜇𝜇𝜇 and 10 𝜇𝜇𝜇𝜇, respectively. Furthermore, the statistics of switching parameters has been done in the Set and Reset processes. Finally, a quantum point contact model has been developed to account for conducting mechanisms and shows the evolution of the conductive filament during RS transitions.

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