Chromium silicon monoxide has received considerable interest due to its applications as resistor. To deeply explore the key factors that determine the electro-thermal properties of chromium silicon monoxide films, a variety of chromium silicon monoxide films were prepared on glass and silicon substrates for different deposition conditions. The electrical resistivities of the chromium silicon monoxide films were found to strongly depend on the film thickness, atomic proportion of silicon oxide, and annealing temperature, and reducing the atomic proportion of silicon oxide can effectively suppress its resistivity variation for different temperature. In this case, choosing smaller atomic proportion of silicon oxide can greatly enhance the life stability of the chromium silicon oxide films. Based on the measured data, a chromium silicon monoxide film with the optimized thickness, electrical resistivity, and thermal conductivity, are fabricated, and its influence on the physical performances of the electrical memory is also assessed.

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