In this paper, triple cathode buffer layers (CBLs) composed of phenyl-C61-butyric acid methyl ester (PCBM), C60, and LiF layers were introduced into the planar p-i-n perovskite solar cells (p-i-n PSCs) with a device structure of ITO/PEDOT:PSS/CH3NH3PbI3-xClx/CBLs/Al. For comparison, a single CBL of PCBM and a double CBL of PCBM/LiF were also investigated in the p-i-n PSCs. On the basis of the PCBM buffer layer, the addition of a thin LiF layer facilitated the charge collection process and led to the dramatic improvement of the power conversion efficiency (PCE) of the PSCs up to 14.69% under an illumination of AM 1.5G, 100 mW/cm(2), which is to date one of the highest efficiencies of the p-i-n PSCs. By further insertion of a C60 layer between PCBM and LiF in the triple CBLs, a PCE of 14.24% was obtained, and more importantly, the PCBM/C60/LiF triple CBLs are very helpful for improving the stability of the devices and making the LiF layer less thickness-sensitive for achieving high performances of the p-i-n PSCs.
A facile annealing method of room-temperature mixed-solvent-vapor annealing (rtMSVA) was proposed to fabricate high crystallinity and ultra-smooth perovskite thin films, and the photovoltaic performance of perovskite solar cells was improved with the rtMSVA treatment.
Cyclopentadienyliron (CpFe) groups have been successfully attached on the surface of reduced graphene oxide (rG) by a ligand-exchange reaction of ferrocene (Cp2Fe) and rG to produce CpFe-modified reduced graphene oxide (rGFeCp), which exhibits good processability in many organic solvents. In a similar one-pot reaction, graphite was efficiently exfoliated using Cp2Fe as the intercalator to form CpFe-attached freestanding graphene nanosheets (GFeCp, $10 layers). Upon pyrolysis and ammonia activation, rGFeCp and GFeCp were converted to iron/nitrogen co-doped porous graphenes, namely, rGFe-800a and GFe-800a, respectively. The obtained rGFe-800a exhibited good electrochemical performance for the oxygen reduction reaction (ORR) under alkaline conditions (0.1 M KOH) with a low half-wave potential at À0.29 V, a dominant four-electron transfer mechanism (n ¼ 3.5 at À1.0 V), and a maximum diffusionlimiting current density of 4.86 mA cm À2 . In addition, rGFe-800a showed excellent methanol tolerance, superior to that of commercial 20% Pt/C. The effect of iron/nitrogen co-doping plays a key role in the good ORR activities of the as-prepared materials. † Electronic supplementary information (ESI) available: Preparation details, TGA spectra, AFM images, XPS surveys, XRD spectra, ORR performance of GFe-800a, and elemental analysis based on XPS analysis. See
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