Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs parallel searches for matched entries over a memory array for a given input query. CAMs are widely used for data-centric applications that involve pattern matching and search functionality. To accommodate the ever expanding data, it is attractive to resort to analog CAM for memory density improvement. However, the digital CAM design nowadays based on standard CMOS or emerging nonvolatile memories (e.g., resistive storage devices) is already challenging due to area, power, and cost penalties. Thus, it can be extremely expensive to achieve analog CAM with those technologies due to added cell components. As such, we propose, for the first time, a universal compact FeFET based CAM design, FeCAM, with search and storage functionality enabled in digital and analog domain simultaneously. By exploiting the multi-level-cell (MLC) states of FeFET, FeCAM can store and search inputs in either digital or analog domain. We perform a device-circuit co-design of the proposed FeCAM and validate its functionality and performance using an experimentally calibrated FeFET model. Circuit level simulation results demonstrate that FeCAM can either store continuous matching ranges or encode 3-bit data in a single CAM cell. When compared with the existing digital CMOS based CAM approaches, FeCAM is found to improve both memory density by 22.4× and energy saving by 8.6/3.2× for analog/digital modes, respectively. In the CAM-related application, our evaluations show that FeCAM can achieve 60.5×/23.1× saving in area/search energy compared with conventional CMOS based CAMs.

No abstract

Content addressable memory (CAM) is widely used in associative search tasks due to its parallel pattern matching capability. As more complex and data‐intensive tasks emerge, it is becoming increasingly important to enhance CAM density for improved performance and better area efficiency. To reduce the area overheads, various nonvolatile memory (NVM) devices, such as ferroelectric field‐effect transistors (FeFETs), are used in CAM design. Herein, a novel ultracompact 1FeFET CAM design that enables parallel associative search and in‐memory hamming distance calculation is used, as well as a multibit CAM for exact search using the same CAM cell. The proposed CAM design leverages the 1FeFET1R structure, and compact device designs that integrate the series resistor current limiter into the intrinsic FeFET structure are demonstrated to turn the 1FeFET1R structure into an effective 1FeFET cell. A two‐step search operation of the proposed binary and multibit 1FeFET CAM array through both experiments and simulations is proposed, showing a sufficient sensing margin despite unoptimized FeFET device variation. In genome pattern matching applications, using the hyperdimensional computing paradigm, the design results in a 89.9× speedup and 66.5× improvement in energy efficiency over the state‐of‐the‐art alignment tools on GPU.

No abstract

No abstract