The performance of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is better than silicon devices in terms of switching speed, switching loss and temperature tolerance. Due to the higher di/dt and dv/dt during the switching process and the combined effect of various parasitic parameters, serious bridge-leg crosstalk will be generated in the SiC MOSFET bridge circuit. This paper firstly analyzes the mechanism of crosstalk, and based on the parameters extracted from the device data sheet and experiments, the maximum values of the bridge-leg crosstalk voltage under different operation conditions are calculated. Secondly, a passive Miller clamp circuit on crosstalk suppression in SiC MOSFET bridge-leg configuration is proposed in this paper. When the crosstalk occurs, the proposed driver circuit shunt the Miller current to the ground, and the gate-source parasitic capacitance of SiC MOSFET is bypassed. The advantages of the proposed crosstalk suppression circuit are that the switching speed is not sacrificed, the circuit topology is relatively simple, and it is easy to be integrated into the driver circuit of SiC MOSFETs. Finally, experimental results prove the effectiveness of the proposed crosstalk suppression circuit.