Heat exchange between a solid material and the gas environment is critical for the heat dissipation of miniature electronic devices. In this aspect, existing experimental studies focus on non-porous structures such as solid thin films, nanotubes, and wires. In this work, the proposed two-layer model for the heat transfer coefficient (HTC) between a solid sample and the surrounding air is extended to 70-nm-thick nanoporous Si thin films that are patterned with periodic rectangular nanopores having feature sizes of 100–400 nm. The HTC values are extracted using the 3[Formula: see text] method based on AC self-heating of a suspended sample with better accuracy than steady-state measurements in some studies. The dominance of air conduction in the measured HTCs is confirmed by comparing measurements with varied sample orientations. The two-layer model, developed for nanotubes, is still found to be accurate when the nanoporous film is simply treated as a solid film in the HTC evaluation along with the radiative mean beam length as the characteristic length of the nanoporous film. This finding indicates the potential of increasing HTC by introducing ultra-fine nanoporous patterns, as guided by the two-layer model.

At the atomic level, heat is viewed as energy for lattice vibrational waves, i.e., a mechanical wave. Correspondingly, the strain as atomic displacement can have a profound impact on the thermal transport. Despite numerous atomistic simulations, fewer experimental efforts can be found for strain-dependent thermal properties of individual nanostructures and thin films. In this work, suspended 2  μm-thick Si films were stretched to reveal the influence of the uniaxial tensile strain on in-plane thermal conductivity along the stretching direction. In a high vacuum, the room-temperature thermal conductivity of a 2  μm-thick Si film decreased from 135.5 ± 6.9 to 127.2 ± 6.5 W/m K under a ∼0.44% tensile strain. This thermal conductivity decrease followed the predicted trend for Si films. In addition, the heat transfer coefficient of representative thin films in the air was also measured to reveal the impact of the heat loss along the sample sidewall on previous in-air thermal measurements.

Polycrystalline thin films are widely used for devices and energy-related applications, such as power electronics, solar cells, and thermal management of devices. In many cases, large-scale crystallization during thin-film growth is challenging, so columnar grains are often found in metal and semiconductor thin films. These rough columnar grain boundaries may also have different phonon specularities from that for typically smoother top/bottom film surfaces. A simple analytical model to separately treat these boundaries and interfaces for phonon scattering is currently unavailable, although the in-plane thermal transport is critical to heat spreading within thin-film devices. In this paper, we extend the effective medium formulation from three-dimensional polycrystalline bulk materials to columnar-grained thin films. The model predictions agree well with those given by frequency-dependent phonon Monte Carlo simulations, considering varied phonon specularity at top/bottom film surfaces and grain-boundary phonon transmissivity. The analytical model is further used to analyze the existing data on polycrystalline ZnO thin films with columnar grains.